15
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FN6115.5
October 5, 2012
FIGURE 23. RECEIVER OUTPUT CURRENT vs RECEIVER
OUTPUT VOLTAGE
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
535
PROCESS:
Si Gate BiCMOS
Typical Performance Curves VCC = 3.3V, TA = +25°C; Unless Otherwise Specified (Continued)
RECEIVER OUTPUT VOLTAGE (V)
RE
CEIV
ER
OUTPUT
CURRENT
(m
A)
01.0
2.0
3.0
3.5
1.5
2.5
0.5
0
5
10
15
20
25
30
35
VOH, +25°C
VOH, +85°C
VOL, +25°C
VOL, +85°C
ISL83070E, ISL83071E, ISL83072E, ISL83073E, ISL83075E, ISL83076E, ISL83077E, ISL83078E
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